Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 95
This decreases the time required for gelation as shown in Figure 4 but one could
also add a catalyst to decrease the gel time as shown in Figure 5 . For those
experiments , the solids content was maintained at 5 % and no solvent
evaporation ...
This decreases the time required for gelation as shown in Figure 4 but one could
also add a catalyst to decrease the gel time as shown in Figure 5 . For those
experiments , the solids content was maintained at 5 % and no solvent
evaporation ...
Page 117
As the partial charge of the Si atom increases , the contribution of the vibrational
modes to es decreases . The contribution of the vibrational modes to es depends
on the ratio of a plasma frequency to a vibrational bandgap or average TO ...
As the partial charge of the Si atom increases , the contribution of the vibrational
modes to es decreases . The contribution of the vibrational modes to es depends
on the ratio of a plasma frequency to a vibrational bandgap or average TO ...
Page 145
The e due to electronic polarization relative dielectric constant decreased from 4 .
... 3 Dielectric constant estimated by C - V and The decrease in the dielectric
constant estimated from the ellipsometry measurements and Kramers - Kronig ...
The e due to electronic polarization relative dielectric constant decreased from 4 .
... 3 Dielectric constant estimated by C - V and The decrease in the dielectric
constant estimated from the ellipsometry measurements and Kramers - Kronig ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |