Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 28
Page 91
... density xerogels ) for ILD and IMD applications . Advantages of these materials include high thermal stability , small pore size , and similarity to conventional deposition processes , precursors and final material ( silica ) . We have ...
... density xerogels ) for ILD and IMD applications . Advantages of these materials include high thermal stability , small pore size , and similarity to conventional deposition processes , precursors and final material ( silica ) . We have ...
Page 92
... density increases , dielectric constant and mechanical strength increase but the pore size decreases . This suggests that the optimum density range for semiconductor applications is not the very low densities associated with K ~ 1 but ...
... density increases , dielectric constant and mechanical strength increase but the pore size decreases . This suggests that the optimum density range for semiconductor applications is not the very low densities associated with K ~ 1 but ...
Page 93
... density Drying w / o shrinkage Low density , no defects , excellent control of density Figure 2. Deposition and drying of spin - on low dielectric constant films showing drying and gelation stages . that an insufficient number of bonds ...
... density Drying w / o shrinkage Low density , no defects , excellent control of density Figure 2. Deposition and drying of spin - on low dielectric constant films showing drying and gelation stages . that an insufficient number of bonds ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber