Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 91
... density xerogels ) for ILD and IMD applications . Advantages of these materials include high thermal stability , small pore size , and similarity to conventional deposition processes , precursors and final material ( silica ) . We have ...
... density xerogels ) for ILD and IMD applications . Advantages of these materials include high thermal stability , small pore size , and similarity to conventional deposition processes , precursors and final material ( silica ) . We have ...
Page 92
... density increases , dielectric constant and mechanical strength increase but the pore size decreases . This suggests that the optimum density range for semiconductor applications is not the very low densities associated with K ~ 1 but ...
... density increases , dielectric constant and mechanical strength increase but the pore size decreases . This suggests that the optimum density range for semiconductor applications is not the very low densities associated with K ~ 1 but ...
Page 93
... density Drying w / o shrinkage Low density , no defects , excellent control of density Figure 2. Deposition and drying of spin - on low dielectric constant films showing drying and gelation stages . that an insufficient number of bonds ...
... density Drying w / o shrinkage Low density , no defects , excellent control of density Figure 2. Deposition and drying of spin - on low dielectric constant films showing drying and gelation stages . that an insufficient number of bonds ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films