Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 152
... Dependence on Substrate B. Dependence on F Content C. Dependence on Anneal Temp . Sample Cap . Change Sample Cap . Change Sample 11 % F -2.4 % 11 % F -3.3 % 11 % F Cap . Change -0.2 % SiOF / Al / Si SiOF / Al / SiO2 / Si SiOF / AI / Si ...
... Dependence on Substrate B. Dependence on F Content C. Dependence on Anneal Temp . Sample Cap . Change Sample Cap . Change Sample 11 % F -2.4 % 11 % F -3.3 % 11 % F Cap . Change -0.2 % SiOF / Al / Si SiOF / Al / SiO2 / Si SiOF / AI / Si ...
Page 163
... dependence , indicating an etching - modified surface film thicker than the escape depth of the photoelectrons , in agreement with the RBS data . XPS data for samples S5 and S9 were identical to those for the 1.2 min . etched samples ...
... dependence , indicating an etching - modified surface film thicker than the escape depth of the photoelectrons , in agreement with the RBS data . XPS data for samples S5 and S9 were identical to those for the 1.2 min . etched samples ...
Page 193
... dependence of г , on pulse off time , t1 , is known ( r , = 0.18 ( 1 - e - 1 ) , in nm / cycle ) , 15 and can be substituted in for d . The resulting models have a zero , second , and first order dependence on the concentration of ...
... dependence of г , on pulse off time , t1 , is known ( r , = 0.18 ( 1 - e - 1 ) , in nm / cycle ) , 15 and can be substituted in for d . The resulting models have a zero , second , and first order dependence on the concentration of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films