Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 16
... Deposition of Polyimides Since the VDP deposition system has been described in detail elsewhere , we give here only a brief summary7 . The deposition system is a modified bell - jar vacuum evaporator with a three- sample rotating ...
... Deposition of Polyimides Since the VDP deposition system has been described in detail elsewhere , we give here only a brief summary7 . The deposition system is a modified bell - jar vacuum evaporator with a three- sample rotating ...
Page 93
... deposition in air Age at 50-150 ° C For nanoporous silica , the film must gel ( i.e. cross - link to yield a continuous solid network spanning the entire fluid ) before it dries . Gelation occurs after precursor deposition either as a ...
... deposition in air Age at 50-150 ° C For nanoporous silica , the film must gel ( i.e. cross - link to yield a continuous solid network spanning the entire fluid ) before it dries . Gelation occurs after precursor deposition either as a ...
Page 167
... deposition rate increased as the F / C ratio of the source compounds decreased , and we could deposit the C4F8 film at 480 nm / min . Thus , we found that C4F8 is the most suitable source material for the deposition of a a - C : F film ...
... deposition rate increased as the F / C ratio of the source compounds decreased , and we could deposit the C4F8 film at 480 nm / min . Thus , we found that C4F8 is the most suitable source material for the deposition of a a - C : F film ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films