Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 16
... Deposition of Polyimides Since the VDP deposition system has been described in detail elsewhere , we give here only a brief summary7 . The deposition system is a modified bell - jar vacuum evaporator with a three- sample rotating ...
... Deposition of Polyimides Since the VDP deposition system has been described in detail elsewhere , we give here only a brief summary7 . The deposition system is a modified bell - jar vacuum evaporator with a three- sample rotating ...
Page 93
... deposition in air Age at 50-150 ° C For nanoporous silica , the film must gel ( i.e. cross - link to yield a continuous solid network spanning the entire fluid ) before it dries . Gelation occurs after precursor deposition either as a ...
... deposition in air Age at 50-150 ° C For nanoporous silica , the film must gel ( i.e. cross - link to yield a continuous solid network spanning the entire fluid ) before it dries . Gelation occurs after precursor deposition either as a ...
Page 167
... deposition rate increased as the F / C ratio of the source compounds decreased , and we could deposit the C4F8 film at 480 nm / min . Thus , we found that C4F8 is the most suitable source material for the deposition of a a - C : F film ...
... deposition rate increased as the F / C ratio of the source compounds decreased , and we could deposit the C4F8 film at 480 nm / min . Thus , we found that C4F8 is the most suitable source material for the deposition of a a - C : F film ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber