Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 146
... rate of 150 sccm . Because -OH bonds have a large electric dipole moment ... deposition ( APCVD ) [ 4 ] . Patrick et al . reported that when the -OH ... rate reduces the dielectric constant of SiO , films . The reason for the decrease of ...
... rate of 150 sccm . Because -OH bonds have a large electric dipole moment ... deposition ( APCVD ) [ 4 ] . Patrick et al . reported that when the -OH ... rate reduces the dielectric constant of SiO , films . The reason for the decrease of ...
Page 147
... deposition rate , as shown in Fig . 6. Etching does not play a role in decreasing the film deposition rate , since overetching was not obsreved during the trench deposition . When no CF , was added , the deposition rate was increased ...
... deposition rate , as shown in Fig . 6. Etching does not play a role in decreasing the film deposition rate , since overetching was not obsreved during the trench deposition . When no CF , was added , the deposition rate was increased ...
Page 167
... deposition rate increased as the F / C ratio of the source compounds decreased , and we could deposit the C4F8 film at 480 nm / min . Thus , we found that C4F8 is the most suitable source material for the deposition of a a - C : F film ...
... deposition rate increased as the F / C ratio of the source compounds decreased , and we could deposit the C4F8 film at 480 nm / min . Thus , we found that C4F8 is the most suitable source material for the deposition of a a - C : F film ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber