Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 83
... depth probed varies with the cosine of the angle of incidence , this depth could be varied by a factor of 4 between take - off angles of 0 ° and 70 ° . Atomic profiles so obtained Fig.4 : PA - FTIR signal for Teflon AF1600 indicate ...
... depth probed varies with the cosine of the angle of incidence , this depth could be varied by a factor of 4 between take - off angles of 0 ° and 70 ° . Atomic profiles so obtained Fig.4 : PA - FTIR signal for Teflon AF1600 indicate ...
Page 141
... depth profile of fluorine in the film . As can be seen in the figure , actual fluorine concentration in the bulk is 6-7at . % . Although this value is almost half of that for top surface , it is still higher than the reported value of ...
... depth profile of fluorine in the film . As can be seen in the figure , actual fluorine concentration in the bulk is 6-7at . % . Although this value is almost half of that for top surface , it is still higher than the reported value of ...
Page 156
... depth of SiDLC needed to produce an efficient etch - stop SiO2 layer would be expected to decrease as the SiDLC bulk Si content increases . The present paper describes DLC and FDLC films prepared by plasma assisted chemical vapor ...
... depth of SiDLC needed to produce an efficient etch - stop SiO2 layer would be expected to decrease as the SiDLC bulk Si content increases . The present paper describes DLC and FDLC films prepared by plasma assisted chemical vapor ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber