Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 71
... determined . In our studies , first of all , various parameters affecting the imidization process of the polyimide film have been determined . The kinetics involving the imidization process was investigated with a differential scanning ...
... determined . In our studies , first of all , various parameters affecting the imidization process of the polyimide film have been determined . The kinetics involving the imidization process was investigated with a differential scanning ...
Page 129
... determined by thickness measurements before and after CMP . A Tencor SpectraMap 300 was used for thickness measurement . Fluorine content of the FSG films was determined with a Bio Rad FTIR . Refractive Index was measured using a ...
... determined by thickness measurements before and after CMP . A Tencor SpectraMap 300 was used for thickness measurement . Fluorine content of the FSG films was determined with a Bio Rad FTIR . Refractive Index was measured using a ...
Page 156
... determined from the radius of curvature induced on the substrate by the deposited film . Thickness changes as result of annealing were determined by measuring the height of steps patterned in the films . The SiDLC films were etched in a ...
... determined from the radius of curvature induced on the substrate by the deposited film . Thickness changes as result of annealing were determined by measuring the height of steps patterned in the films . The SiDLC films were etched in a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber