Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 71
... determined . In our studies , first of all , various parameters affecting the imidization process of the polyimide film have been determined . The kinetics involving the imidization process was investigated with a differential scanning ...
... determined . In our studies , first of all , various parameters affecting the imidization process of the polyimide film have been determined . The kinetics involving the imidization process was investigated with a differential scanning ...
Page 129
... determined by thickness measurements before and after CMP . A Tencor SpectraMap 300 was used for thickness measurement . Fluorine content of the FSG films was determined with a Bio Rad FTIR . Refractive Index was measured using a ...
... determined by thickness measurements before and after CMP . A Tencor SpectraMap 300 was used for thickness measurement . Fluorine content of the FSG films was determined with a Bio Rad FTIR . Refractive Index was measured using a ...
Page 156
... determined from the radius of curvature induced on the substrate by the deposited film . Thickness changes as result of annealing were determined by measuring the height of steps patterned in the films . The SiDLC films were etched in a ...
... determined from the radius of curvature induced on the substrate by the deposited film . Thickness changes as result of annealing were determined by measuring the height of steps patterned in the films . The SiDLC films were etched in a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films