Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 87
... still unresolved . Gore continues to use this test extensively despite its limitations , because it is relatively easy to conduct and gives a quantitative result . Gore has developed a thermal shock test for adhesion . 87.
... still unresolved . Gore continues to use this test extensively despite its limitations , because it is relatively easy to conduct and gives a quantitative result . Gore has developed a thermal shock test for adhesion . 87.
Page 96
... develop a better understanding of how to control solvent evaporation , we have developed a mass transfer model to predict the evaporation rate of solvent from the wafer . In the model , we have assumed : 1 ) There are no thermal effects ...
... develop a better understanding of how to control solvent evaporation , we have developed a mass transfer model to predict the evaporation rate of solvent from the wafer . In the model , we have assumed : 1 ) There are no thermal effects ...
Page 165
... developed a plasma - enhanced CVD ( PECVD ) technique and proposed the use of fluorinated amorphous carbon thin films ( a - C : F ) as new low- dielectric - constant interlayer dielectrics for ULSI interconnections . These thin films ...
... developed a plasma - enhanced CVD ( PECVD ) technique and proposed the use of fluorinated amorphous carbon thin films ( a - C : F ) as new low- dielectric - constant interlayer dielectrics for ULSI interconnections . These thin films ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films