Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 23
Page ix
... devices . The diversity of participants in this symposium is testimony to the global significance of the topic to the future of semiconductor manufacturing . The symposium included presentations from semiconductor equipment ...
... devices . The diversity of participants in this symposium is testimony to the global significance of the topic to the future of semiconductor manufacturing . The symposium included presentations from semiconductor equipment ...
Page 119
... device geometry , requirements for interlayer dielectrics become increasingly stringent for fabricating reliable ... devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron ...
... device geometry , requirements for interlayer dielectrics become increasingly stringent for fabricating reliable ... devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron ...
Page 142
... Devices and Materials , p.158 ( 1993 ) . 2. T. Homma , Thin Solid Films 278 , 28 ( 1996 ) . 3. N. Hayasaka , H. Miyajima , Y. Nakasaki , R. Katsumata , Extended Abstracts of Int . Conf . on Solid State Devices and Materials , p.157 ...
... Devices and Materials , p.158 ( 1993 ) . 2. T. Homma , Thin Solid Films 278 , 28 ( 1996 ) . 3. N. Hayasaka , H. Miyajima , Y. Nakasaki , R. Katsumata , Extended Abstracts of Int . Conf . on Solid State Devices and Materials , p.157 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films