Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page ix
... devices . The diversity of participants in this symposium is testimony to the global significance of the topic to the future of semiconductor manufacturing . The symposium included presentations from semiconductor equipment ...
... devices . The diversity of participants in this symposium is testimony to the global significance of the topic to the future of semiconductor manufacturing . The symposium included presentations from semiconductor equipment ...
Page 119
... device geometry , requirements for interlayer dielectrics become increasingly stringent for fabricating reliable ... devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron ...
... device geometry , requirements for interlayer dielectrics become increasingly stringent for fabricating reliable ... devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron ...
Page 142
... Devices and Materials , p.158 ( 1993 ) . 2. T. Homma , Thin Solid Films 278 , 28 ( 1996 ) . 3. N. Hayasaka , H. Miyajima , Y. Nakasaki , R. Katsumata , Extended Abstracts of Int . Conf . on Solid State Devices and Materials , p.157 ...
... Devices and Materials , p.158 ( 1993 ) . 2. T. Homma , Thin Solid Films 278 , 28 ( 1996 ) . 3. N. Hayasaka , H. Miyajima , Y. Nakasaki , R. Katsumata , Extended Abstracts of Int . Conf . on Solid State Devices and Materials , p.157 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber