Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page ix
... Dielectric Constant Materials , " at the 1996 MRS Fall Meeting in Boston , MA . Held December 2–3 1996 , this symposium addressed the various approaches and requirements for implementing low - k dielectric materials in the design and ...
... Dielectric Constant Materials , " at the 1996 MRS Fall Meeting in Boston , MA . Held December 2–3 1996 , this symposium addressed the various approaches and requirements for implementing low - k dielectric materials in the design and ...
Page 21
... dielectric is a potential low Ɛ candidate for ULSI manufacture . The search for new IMD materials with low dielectric constant ( k ≤ 2.5 ) to enable sub 0.18 micron technologies is focusing on new polymers , deposited by either ...
... dielectric is a potential low Ɛ candidate for ULSI manufacture . The search for new IMD materials with low dielectric constant ( k ≤ 2.5 ) to enable sub 0.18 micron technologies is focusing on new polymers , deposited by either ...
Page 99
... permittivity intermetal dielectric materials . Porous silica xerogel films have low dielectric permittivity through the incorporation of micropores into the SiO2 network . A feasible xerogel process has been developed . Crack - free and ...
... permittivity intermetal dielectric materials . Porous silica xerogel films have low dielectric permittivity through the incorporation of micropores into the SiO2 network . A feasible xerogel process has been developed . Crack - free and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films