Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 36
... diffusion barriers , to successfully implement the desired materials . Some technologies under development include combinations of Cu and various refractory metals as diffusion barriers or wetting / tie layers . This paper examines the ...
... diffusion barriers , to successfully implement the desired materials . Some technologies under development include combinations of Cu and various refractory metals as diffusion barriers or wetting / tie layers . This paper examines the ...
Page 96
... diffusion constants of common solvents in air . Even if one is attempting to make low density thin films via supercritical processing , the solvent can Figure 8. Thin film evaporation rates at easily evaporate after deposition and ...
... diffusion constants of common solvents in air . Even if one is attempting to make low density thin films via supercritical processing , the solvent can Figure 8. Thin film evaporation rates at easily evaporate after deposition and ...
Page 124
... diffusion up to the annealing temperature of 600 ° C . as - dep . 01 C1 ΤΗ N1 Cu1 Si1 F1 Si2 500 ° C 01 Ti1 N1 Cu1 F1 Si2 006 600 ° C 01 TI1 N1 Cu1 F1 S12 700 ° C 01 Ti1 N1 Cu1 F1 Si2 CYCLES DEKY , O CIRELES Fig . 8 AES depth profiles ...
... diffusion up to the annealing temperature of 600 ° C . as - dep . 01 C1 ΤΗ N1 Cu1 Si1 F1 Si2 500 ° C 01 Ti1 N1 Cu1 F1 Si2 006 600 ° C 01 TI1 N1 Cu1 F1 S12 700 ° C 01 Ti1 N1 Cu1 F1 Si2 CYCLES DEKY , O CIRELES Fig . 8 AES depth profiles ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber