Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 3
... discussed . An attempt is made to correlate structure / property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application . Key differences in chemistry and property ...
... discussed . An attempt is made to correlate structure / property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application . Key differences in chemistry and property ...
Page 65
... discussed here are also soluble in the non polar sol- vent toluene . Exceptions are those polymers which are derived from 4,4 ' - dihydroxybiphenyl , 4,4'- dihydoxydiphenyl sulfone , and 4,4 ' - dihydroxybenzophenone , which introduce ...
... discussed here are also soluble in the non polar sol- vent toluene . Exceptions are those polymers which are derived from 4,4 ' - dihydroxybiphenyl , 4,4'- dihydoxydiphenyl sulfone , and 4,4 ' - dihydroxybenzophenone , which introduce ...
Page 183
... discussed . EXPERIMENT The PECVD and HDPCVD films discussed in this paper were deposited using commercially available 200mm wafer reactors from Applied Materials and Novellus Systems . The PECVD FSG films were processed exclusively in ...
... discussed . EXPERIMENT The PECVD and HDPCVD films discussed in this paper were deposited using commercially available 200mm wafer reactors from Applied Materials and Novellus Systems . The PECVD FSG films were processed exclusively in ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber