Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 93
... drying Gelation Low density but pullout and cracks , poor control of density Drying w / o shrinkage Low density , no defects , excellent control of density Figure 2. Deposition and drying of spin - on low dielectric constant films showing ...
... drying Gelation Low density but pullout and cracks , poor control of density Drying w / o shrinkage Low density , no defects , excellent control of density Figure 2. Deposition and drying of spin - on low dielectric constant films showing ...
Page 97
... drying stresses from the capillary pressure associated with fluid in the small pores which cause shrinkage during drying . During drying a gel will shrink until the matrix strength is strong enough to resist the pore fluid capillary ...
... drying stresses from the capillary pressure associated with fluid in the small pores which cause shrinkage during drying . During drying a gel will shrink until the matrix strength is strong enough to resist the pore fluid capillary ...
Page 101
... drying , causing permanent shrinkage of the film . To reduce moisture adsorption and film shrinkage during drying , the surface hydroxyl groups in xerogel films were replaced with non - condensing groups , such as methyl . Since no ...
... drying , causing permanent shrinkage of the film . To reduce moisture adsorption and film shrinkage during drying , the surface hydroxyl groups in xerogel films were replaced with non - condensing groups , such as methyl . Since no ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber