Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 52
... effect is shown in Figure 5. Large features are obvious which are not due to classic substrate dewetting since the valleys don't extend to the silicon substrate . Preliminary evidence suggests that this effect is due to surface - energy ...
... effect is shown in Figure 5. Large features are obvious which are not due to classic substrate dewetting since the valleys don't extend to the silicon substrate . Preliminary evidence suggests that this effect is due to surface - energy ...
Page 67
... effects of polymer structures on macroscopic properties can be cooperative , and the effect of a cer- tain structural modification can not easily be generalized , but depends on the rest of the repeating unit as well . g g ' 8 g The ...
... effects of polymer structures on macroscopic properties can be cooperative , and the effect of a cer- tain structural modification can not easily be generalized , but depends on the rest of the repeating unit as well . g g ' 8 g The ...
Page 68
... effect may be found in the presence of the trifluoromethyl groups . At high temperatures , a ring scission in reverse of the reaction described in Scheme 3 may occur , yiel- ding initially a nitrile and a keto carbene . Supposed the ...
... effect may be found in the presence of the trifluoromethyl groups . At high temperatures , a ring scission in reverse of the reaction described in Scheme 3 may occur , yiel- ding initially a nitrile and a keto carbene . Supposed the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber