Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Results 1-3 of 5
Page 38
... elastic interactions between the wafer and the attached films . At 250 ° C the slope increases from the elastic interaction value , and the curvature dips to a more negative level at 275 ° C . This response may indicate the onset of ...
... elastic interactions between the wafer and the attached films . At 250 ° C the slope increases from the elastic interaction value , and the curvature dips to a more negative level at 275 ° C . This response may indicate the onset of ...
Page 45
... elastic modulus [ 16 ] . The results are presented in Table 3. For reference , the hardness as measured on SiO2 and sputtered Al are 8-10 , and 1 - 2 GPa respectively . A hardness value for parylene of 0.56 GPa has been previously ...
... elastic modulus [ 16 ] . The results are presented in Table 3. For reference , the hardness as measured on SiO2 and sputtered Al are 8-10 , and 1 - 2 GPa respectively . A hardness value for parylene of 0.56 GPa has been previously ...
Page 150
... elastic recoil detection ( ERD ) of hydrogen were performed on samples on all types of substrates . High resolution transmission electron microscopy ( HRTEM ) and nanoprobe energy dispersive analysis by X - rays ( EDAX ) were performed ...
... elastic recoil detection ( ERD ) of hydrogen were performed on samples on all types of substrates . High resolution transmission electron microscopy ( HRTEM ) and nanoprobe energy dispersive analysis by X - rays ( EDAX ) were performed ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber