Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 9
... elongation ( 4 % ) , undoubtedly due to the high degree of crosslinking in the structure . The relatively high thermal expansion coefficient in a highly crosslinked polymer demonstrates that crosslinking along will not result in a low ...
... elongation ( 4 % ) , undoubtedly due to the high degree of crosslinking in the structure . The relatively high thermal expansion coefficient in a highly crosslinked polymer demonstrates that crosslinking along will not result in a low ...
Page 89
... elongation material . Replacing a high - modulus , low - elongation material such as SiO2 will have an as yet unknown effect on stress - dependent reliability issues such as electromigration . 8KV X10,000 1Pm Figure 5. SEM fracture ...
... elongation material . Replacing a high - modulus , low - elongation material such as SiO2 will have an as yet unknown effect on stress - dependent reliability issues such as electromigration . 8KV X10,000 1Pm Figure 5. SEM fracture ...
Page 180
... ) 2000 1900 * 2270 elongation at break ( % ) 6 3.6 * 4.1 * These measurements are for FLARE version 1.51 ; measurements for 1.0 are expected to be similar . Table VI . Isothermal Weight Loss °C isothermal weight loss. 180.
... ) 2000 1900 * 2270 elongation at break ( % ) 6 3.6 * 4.1 * These measurements are for FLARE version 1.51 ; measurements for 1.0 are expected to be similar . Table VI . Isothermal Weight Loss °C isothermal weight loss. 180.
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber