Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 23
... energy and atomic concentration of the elements detected in the survey scans . Monochromatic aluminum x- ray source with 350 watts power was used to analyze 2 mm x 0.8 mm region with an exit angle of 65 ° . The quantification of the ...
... energy and atomic concentration of the elements detected in the survey scans . Monochromatic aluminum x- ray source with 350 watts power was used to analyze 2 mm x 0.8 mm region with an exit angle of 65 ° . The quantification of the ...
Page 27
... Energy ( eV ) 0 700 695 Binding Energy ( eV ) Figure 3 : ESCA F1s Spectrum of Parylene AF - 4 Figure 4 : ESCA C1s Spectrum of Parylene AF - 4 4020.41 4020.31 4020.0 0:00 2:00 4:00 6:00 8:00 Time ( 27.
... Energy ( eV ) 0 700 695 Binding Energy ( eV ) Figure 3 : ESCA F1s Spectrum of Parylene AF - 4 Figure 4 : ESCA C1s Spectrum of Parylene AF - 4 4020.41 4020.31 4020.0 0:00 2:00 4:00 6:00 8:00 Time ( 27.
Page 162
40 0.0 0.5 Energy ( MeV ) Etch time ( min ) as - dep . 2 30 10 25 Normalized Yield 220 30 10 C Energy ( MeV ) 1.0 1.5 0.0 0.5 1.0 1.5 40 Etch time ( min ) -as - dep . 10 25 Normalized Yield 10 20 C O 0 0 50 100 150 200 250 300 0 50 100 ...
40 0.0 0.5 Energy ( MeV ) Etch time ( min ) as - dep . 2 30 10 25 Normalized Yield 220 30 10 C Energy ( MeV ) 1.0 1.5 0.0 0.5 1.0 1.5 40 Etch time ( min ) -as - dep . 10 25 Normalized Yield 10 20 C O 0 0 50 100 150 200 250 300 0 50 100 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films