Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 23
... energy and atomic concentration of the elements detected in the survey scans . Monochromatic aluminum x- ray source with 350 watts power was used to analyze 2 mm x 0.8 mm region with an exit angle of 65 ° . The quantification of the ...
... energy and atomic concentration of the elements detected in the survey scans . Monochromatic aluminum x- ray source with 350 watts power was used to analyze 2 mm x 0.8 mm region with an exit angle of 65 ° . The quantification of the ...
Page 27
... Energy ( eV ) 0 700 695 Binding Energy ( eV ) Figure 3 : ESCA F1s Spectrum of Parylene AF - 4 Figure 4 : ESCA C1s Spectrum of Parylene AF - 4 4020.41 4020.31 4020.0 0:00 2:00 4:00 6:00 8:00 Time ( 27.
... Energy ( eV ) 0 700 695 Binding Energy ( eV ) Figure 3 : ESCA F1s Spectrum of Parylene AF - 4 Figure 4 : ESCA C1s Spectrum of Parylene AF - 4 4020.41 4020.31 4020.0 0:00 2:00 4:00 6:00 8:00 Time ( 27.
Page 162
40 0.0 0.5 Energy ( MeV ) Etch time ( min ) as - dep . 2 30 10 25 Normalized Yield 220 30 10 C Energy ( MeV ) 1.0 1.5 0.0 0.5 1.0 1.5 40 Etch time ( min ) -as - dep . 10 25 Normalized Yield 10 20 C O 0 0 50 100 150 200 250 300 0 50 100 ...
40 0.0 0.5 Energy ( MeV ) Etch time ( min ) as - dep . 2 30 10 25 Normalized Yield 220 30 10 C Energy ( MeV ) 1.0 1.5 0.0 0.5 1.0 1.5 40 Etch time ( min ) -as - dep . 10 25 Normalized Yield 10 20 C O 0 0 50 100 150 200 250 300 0 50 100 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber