Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 70
... Engineering , edited by H. F. Mark , N. M. Bikales , C. G. Over- berger , and G. Menges ( John Wiley & Sons , New York 1988 ) ; Chapters on : Polybenzimidazoles ; Po- lyhydrazides and Polyoxadiazoles ; Polybenzothiazoles and ...
... Engineering , edited by H. F. Mark , N. M. Bikales , C. G. Over- berger , and G. Menges ( John Wiley & Sons , New York 1988 ) ; Chapters on : Polybenzimidazoles ; Po- lyhydrazides and Polyoxadiazoles ; Polybenzothiazoles and ...
Page 111
... Engineering , and Electrical and Computer Engineering , North Carolina State University , Raleigh , NC 27965-8202 ABSTRACT Si - O - F alloys have static dielectric constants ( Es ) significantly lower than SiO2 . Infrared absorption ...
... Engineering , and Electrical and Computer Engineering , North Carolina State University , Raleigh , NC 27965-8202 ABSTRACT Si - O - F alloys have static dielectric constants ( Es ) significantly lower than SiO2 . Infrared absorption ...
Page 119
... Engineering , Hanyang University , Seongdong - ku , Seoul 133-791 , KOREA , jwpark@hyunp1.hanyang.ac.kr ABSTRACT The reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIS is investigated . SiOF ...
... Engineering , Hanyang University , Seongdong - ku , Seoul 133-791 , KOREA , jwpark@hyunp1.hanyang.ac.kr ABSTRACT The reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIS is investigated . SiOF ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber