Low-Dielectric Constant Materials II:H. Treichel, A. C. Jones, A. Lagendijk, K. Uram Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material. |
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Page 94
It is important to note that the reactions listed above are all reversible although
the equilibrium constants can vary over a wide range. For thin films, the problem
is complicated because of the dramatic changes in relative concentrations of the
...
It is important to note that the reactions listed above are all reversible although
the equilibrium constants can vary over a wide range. For thin films, the problem
is complicated because of the dramatic changes in relative concentrations of the
...
Page 96
10'' There is no effect of silica or porosity on the solvent's equilibrium vapor
pressure. 0.6 ratio Figure 8. Thin film evaporation rates at before ambient
temperature. 103 uf O a 10° 2) 3M 300 320 340 Temperature (K) Figure 9.
Ethanol thin film ...
10'' There is no effect of silica or porosity on the solvent's equilibrium vapor
pressure. 0.6 ratio Figure 8. Thin film evaporation rates at before ambient
temperature. 103 uf O a 10° 2) 3M 300 320 340 Temperature (K) Figure 9.
Ethanol thin film ...
Page 97
The solvent affects both the equilibrium solubility and rate of dissolution of silica
which are directly related to aging kinetics. In general, aging is very slow with
aprotic solvents and more rapid when protic solvents are employed. Optimum ...
The solvent affects both the equilibrium solubility and rate of dissolution of silica
which are directly related to aging kinetics. In general, aging is very slow with
aprotic solvents and more rapid when protic solvents are employed. Optimum ...
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Contents
towDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low eR Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
a-C:F film adhesion alloy ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking CTAC/TEOS cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing indicates integrated interface ISBN low dielectric constant low-k Materials Research Society measured mechanical metal moisture absorption monomers Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene parylene AF-4 peak PECVD PFCB Phys planarization plasma polyimide polyimide film polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance rf power sample semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spectroscopy spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer xerogel