Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 94
... equilibrium constants can vary over a wide range . For thin films , the problem is complicated because of the dramatic changes in relative concentrations of the various species that rapidly occur after deposition because of evaporation ...
... equilibrium constants can vary over a wide range . For thin films , the problem is complicated because of the dramatic changes in relative concentrations of the various species that rapidly occur after deposition because of evaporation ...
Page 96
... equilibrium vapor pressure . 3 ) The evaporation rate is controlled by mass transfer in the air above the film . Evaporation rate ( nm / s ) 0.1 103 102 101 10 ° n - butanol water 0.2 0.4 0.6 0.8 Saturation ratio 0 % saturation -A 50 ...
... equilibrium vapor pressure . 3 ) The evaporation rate is controlled by mass transfer in the air above the film . Evaporation rate ( nm / s ) 0.1 103 102 101 10 ° n - butanol water 0.2 0.4 0.6 0.8 Saturation ratio 0 % saturation -A 50 ...
Page 97
... equilibrium solubility and rate of dissolution of silica which are directly related to aging kinetics . In general , aging is very slow with aprotic solvents and more rapid when protic solvents are employed . DRYING SHRINKAGE Stress ...
... equilibrium solubility and rate of dissolution of silica which are directly related to aging kinetics . In general , aging is very slow with aprotic solvents and more rapid when protic solvents are employed . DRYING SHRINKAGE Stress ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber