Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 156
However , an etch - stop layer must be incorporated into the structure to prevent
the etching from continuing into the DLC layer beneath the one being patterned .
While Si or SiO , can be used as etch - stops for oxygen RIE patterning of DLC ...
However , an etch - stop layer must be incorporated into the structure to prevent
the etching from continuing into the DLC layer beneath the one being patterned .
While Si or SiO , can be used as etch - stops for oxygen RIE patterning of DLC ...
Page 161
for the S3 film and is related to the time needed to grow a steady - state Si0 , - rich
surface layer , as will be discussed in subsequent sections . The etch rate
decreases with increasing Si content , with steady - state etch rates of 15 . 2 + 1 .
0 , 5 .
for the S3 film and is related to the time needed to grow a steady - state Si0 , - rich
surface layer , as will be discussed in subsequent sections . The etch rate
decreases with increasing Si content , with steady - state etch rates of 15 . 2 + 1 .
0 , 5 .
Page 180
The oxide serves as a hard mask during via etch , and as a protective layer
during subsequent metal deposition and metal etch . The dielectric stack was
patterned with a chemically amplified resist and exposed in a GCA XLS DUV
stepper .
The oxide serves as a hard mask during via etch , and as a protective layer
during subsequent metal deposition and metal etch . The dielectric stack was
patterned with a chemically amplified resist and exposed in a GCA XLS DUV
stepper .
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |