Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 156
... etching of the SiDLC film should become negligible . The etched depth of SiDLC needed to produce an efficient etch - stop SiO2 layer would be expected to decrease as the SiDLC bulk Si content increases . The present paper describes DLC ...
... etching of the SiDLC film should become negligible . The etched depth of SiDLC needed to produce an efficient etch - stop SiO2 layer would be expected to decrease as the SiDLC bulk Si content increases . The present paper describes DLC ...
Page 161
... etch rate decreases with increasing Si content , with steady - state etch rates of 15.2 ± 1.0 , 5.4 ± 0.4 , and 2.9 ± 0.4 nm / min for Si / ( Si + C ) = 3 , 5 , and 9 % respectively . These SiDLC etch rates should be compared to the ...
... etch rate decreases with increasing Si content , with steady - state etch rates of 15.2 ± 1.0 , 5.4 ± 0.4 , and 2.9 ± 0.4 nm / min for Si / ( Si + C ) = 3 , 5 , and 9 % respectively . These SiDLC etch rates should be compared to the ...
Page 180
... etch , and as a protective layer during subsequent metal deposition and metal etch . The dielectric stack was patterned with a chemically amplified resist and exposed in a GCA XLS DUV stepper . The stack was etched in an Applied ...
... etch , and as a protective layer during subsequent metal deposition and metal etch . The dielectric stack was patterned with a chemically amplified resist and exposed in a GCA XLS DUV stepper . The stack was etched in an Applied ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber