Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 89
... rate for PTFE films in sulfuric acid , buffered HF , and positive photoresist developer is essentially zero . The films may be etched in an oxygen plasma system . NDL has measured an etch rate of 200 nm / min at 30 W in an oxygen plasma ...
... rate for PTFE films in sulfuric acid , buffered HF , and positive photoresist developer is essentially zero . The films may be etched in an oxygen plasma system . NDL has measured an etch rate of 200 nm / min at 30 W in an oxygen plasma ...
Page 161
... etch rate decreases with increasing Si content , with steady - state etch rates of 15.2 ± 1.0 , 5.4 ± 0.4 , and 2.9 ± 0.4 nm / min for Si / ( Si + C ) = 3 , 5 , and 9 % respectively . These SiDLC etch rates should be compared to the ...
... etch rate decreases with increasing Si content , with steady - state etch rates of 15.2 ± 1.0 , 5.4 ± 0.4 , and 2.9 ± 0.4 nm / min for Si / ( Si + C ) = 3 , 5 , and 9 % respectively . These SiDLC etch rates should be compared to the ...
Page 163
... etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we ...
... etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films