Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 89
... rate for PTFE films in sulfuric acid , buffered HF , and positive photoresist developer is essentially zero . The films may be etched in an oxygen plasma system . NDL has measured an etch rate of 200 nm / min at 30 W in an oxygen plasma ...
... rate for PTFE films in sulfuric acid , buffered HF , and positive photoresist developer is essentially zero . The films may be etched in an oxygen plasma system . NDL has measured an etch rate of 200 nm / min at 30 W in an oxygen plasma ...
Page 161
... etch rate decreases with increasing Si content , with steady - state etch rates of 15.2 ± 1.0 , 5.4 ± 0.4 , and 2.9 ± 0.4 nm / min for Si / ( Si + C ) = 3 , 5 , and 9 % respectively . These SiDLC etch rates should be compared to the ...
... etch rate decreases with increasing Si content , with steady - state etch rates of 15.2 ± 1.0 , 5.4 ± 0.4 , and 2.9 ± 0.4 nm / min for Si / ( Si + C ) = 3 , 5 , and 9 % respectively . These SiDLC etch rates should be compared to the ...
Page 163
... etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we ...
... etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber