Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Results 1-3 of 19
Page 93
As - deposited liquid precursor film Evaporation and Gelation Evaporation w / o
gelation Unconstrained drying High density Gelation Constrained drying Drying
w / o shrinkage Low density but pullout and cracks , poor control of density Low ...
As - deposited liquid precursor film Evaporation and Gelation Evaporation w / o
gelation Unconstrained drying High density Gelation Constrained drying Drying
w / o shrinkage Low density but pullout and cracks , poor control of density Low ...
Page 95
The silica concentration in the precursor solution will always increase during and
immediately after deposition as a result of solvent evaporation ( note : low initial
solids contents are required to yield good planarization and gapfill ) .
The silica concentration in the precursor solution will always increase during and
immediately after deposition as a result of solvent evaporation ( note : low initial
solids contents are required to yield good planarization and gapfill ) .
Page 96
Evaporation rate ( nm / s ) . 0 . 1 LowPorot - - - - - - The processing of thin films
with controlled 1 , 000 porosity is complicated by the very high solvent
evaporation rates in the films . These high evaporation rates arise from several
factors ...
Evaporation rate ( nm / s ) . 0 . 1 LowPorot - - - - - - The processing of thin films
with controlled 1 , 000 porosity is complicated by the very high solvent
evaporation rates in the films . These high evaporation rates arise from several
factors ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel