Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 5
... exhibit e's too high to be used for low & IMD ( ɛ ~ 3.2 - 3.6 ) , and thus fluorinated versions , including materials from DuPont , are being considered and evaluated for this application [ 11 ] . In general these polymers exhibit e's ...
... exhibit e's too high to be used for low & IMD ( ɛ ~ 3.2 - 3.6 ) , and thus fluorinated versions , including materials from DuPont , are being considered and evaluated for this application [ 11 ] . In general these polymers exhibit e's ...
Page 10
... exhibit mixtures of sp2 and sp3 hybridization . 3 The first published work targeting these types of thin films for ... exhibit significant increases in ɛ when annealed at 300 ° C . In addition , all of the films exhibit significant ...
... exhibit mixtures of sp2 and sp3 hybridization . 3 The first published work targeting these types of thin films for ... exhibit significant increases in ɛ when annealed at 300 ° C . In addition , all of the films exhibit significant ...
Page 11
... exhibit lower thermal stability than some of their counterparts with ε's in the 2.5-3.0 range . To be compatible with CMP ( for damascene processes ) , polymer dielectrics must exhibit extraordinary resistance to polar solvents ...
... exhibit lower thermal stability than some of their counterparts with ε's in the 2.5-3.0 range . To be compatible with CMP ( for damascene processes ) , polymer dielectrics must exhibit extraordinary resistance to polar solvents ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber