Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
... experiments a helicon reactor to deposit highly fluorinated films from source gases including CH4 , CF4 and C2F6 . Using the parallel plate reactor with rf power levels from 50 W to 200 W and deposition pressures from 100-200 mtorr ...
... experiments a helicon reactor to deposit highly fluorinated films from source gases including CH4 , CF4 and C2F6 . Using the parallel plate reactor with rf power levels from 50 W to 200 W and deposition pressures from 100-200 mtorr ...
Page 94
... experiments are often used to mimic thin film , the timescales and rate - controlling processes that occur in a bulk experiment are quite different . For semiconductor processing , the gel time must be reduced to less than one minute ...
... experiments are often used to mimic thin film , the timescales and rate - controlling processes that occur in a bulk experiment are quite different . For semiconductor processing , the gel time must be reduced to less than one minute ...
Page 106
EXPERIMENTAL In all spin - coating experiments , substrates 2.5 x 2.5 cm2 cut from silicon wafers ( Silicon Source ) were used . The wafer pretreatment included sonication in deionized water , followed by soaking overnight in a solution ...
EXPERIMENTAL In all spin - coating experiments , substrates 2.5 x 2.5 cm2 cut from silicon wafers ( Silicon Source ) were used . The wafer pretreatment included sonication in deionized water , followed by soaking overnight in a solution ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber