Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
Endo and Tatsumi used a parallel - plate reactor and in separate experiments a
helicon reactor to deposit highly fluorinated films from source gases including
CH4 , CF4 and C2F6 . Using the parallel plate reactor with rf power levels from
50 W ...
Endo and Tatsumi used a parallel - plate reactor and in separate experiments a
helicon reactor to deposit highly fluorinated films from source gases including
CH4 , CF4 and C2F6 . Using the parallel plate reactor with rf power levels from
50 W ...
Page 94
... in relative concentrations of the various species that rapidly occur after
deposition because of evaporation . Thus , although bulk gel experiments are
often used to mimic thin film , the timescales and rate - controlling processes that
occur in a ...
... in relative concentrations of the various species that rapidly occur after
deposition because of evaporation . Thus , although bulk gel experiments are
often used to mimic thin film , the timescales and rate - controlling processes that
occur in a ...
Page 106
EXPERIMENTAL In all spin - coating experiments , substrates 2 . 5 x 2 . 5 cm2 cut
from silicon wafers ( Silicon Source ) were used . The wafer pretreatment
included sonication in deionized water , followed by soaking overnight in a
solution of ...
EXPERIMENTAL In all spin - coating experiments , substrates 2 . 5 x 2 . 5 cm2 cut
from silicon wafers ( Silicon Source ) were used . The wafer pretreatment
included sonication in deionized water , followed by soaking overnight in a
solution of ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |