Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 17
... field at the interface on the polyimide side , E sin 0 E√sin20- ( np / IRE ) 2 PI where npp is the refractive index of polyimide and nIRE is the refractive index of the IRE . For a ZnSe IRE and an incident angle of 60 ° , is 1.75 . By ...
... field at the interface on the polyimide side , E sin 0 E√sin20- ( np / IRE ) 2 PI where npp is the refractive index of polyimide and nIRE is the refractive index of the IRE . For a ZnSe IRE and an incident angle of 60 ° , is 1.75 . By ...
Page 89
... field of 1.6 MV / cm . These data are in agreement with other sources . The dielectric constant from these measurements is about 1.85 . The dielectric constant of PTFE should be about 2.0 . We believe the difference to be caused by ...
... field of 1.6 MV / cm . These data are in agreement with other sources . The dielectric constant from these measurements is about 1.85 . The dielectric constant of PTFE should be about 2.0 . We believe the difference to be caused by ...
Page 198
... field strength [ MV / cm ] 40 35 39 30 dashed line is a guide to the eye 25 80 60 40 20 00 300 400 500 600 700 800 900 cure temperature [ ° C ] Fig.6 Out - of - plane dielectric constant and average break - down field strength for FOx ...
... field strength [ MV / cm ] 40 35 39 30 dashed line is a guide to the eye 25 80 60 40 20 00 300 400 500 600 700 800 900 cure temperature [ ° C ] Fig.6 Out - of - plane dielectric constant and average break - down field strength for FOx ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber