Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 71
... film was found to be dependent on curing temperature , time and thickness . The degree of imidization of the film rapidly increased between 200 ° C and 350 ° C and then remained constant for curing above 350 ° C , indicating that the ...
... film was found to be dependent on curing temperature , time and thickness . The degree of imidization of the film rapidly increased between 200 ° C and 350 ° C and then remained constant for curing above 350 ° C , indicating that the ...
Page 96
... film thickness which precludes heat and mass transfer resistance in the film , 3 ) the continual flow of fresh air pass the wafer during and after deposition ( necessary to prevent explosive concentrations of solvent in the surrounding ...
... film thickness which precludes heat and mass transfer resistance in the film , 3 ) the continual flow of fresh air pass the wafer during and after deposition ( necessary to prevent explosive concentrations of solvent in the surrounding ...
Page 105
... film thickness , porosity , refractive index and dielectric constant measured by ellipsometry are presented . Using a coating solution containing tetraethyl orthosilicate ( TEOS ) and a cationic cetyltrimethylammonium chloride ( CTAC ) ...
... film thickness , porosity , refractive index and dielectric constant measured by ellipsometry are presented . Using a coating solution containing tetraethyl orthosilicate ( TEOS ) and a cationic cetyltrimethylammonium chloride ( CTAC ) ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber