Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
... films for IC IMD was from NEC Corp [ 31 ] . Endo and Tatsumi used a parallel - plate reactor and in separate experiments a helicon reactor to deposit highly fluorinated films from source gases including CH4 , CF4 and C2F6 . Using the ...
... films for IC IMD was from NEC Corp [ 31 ] . Endo and Tatsumi used a parallel - plate reactor and in separate experiments a helicon reactor to deposit highly fluorinated films from source gases including CH4 , CF4 and C2F6 . Using the ...
Page 149
... films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma upon Si ...
... films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma upon Si ...
Page 159
... deposited DLC films vs dielectric constants : open markers - thickness changes ; solid markers - stresses . A different effect of the deposition power on film stress was observed for the deposition of fluorinated FDLC films . As ...
... deposited DLC films vs dielectric constants : open markers - thickness changes ; solid markers - stresses . A different effect of the deposition power on film stress was observed for the deposition of fluorinated FDLC films . As ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films