Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
The first published work targeting these types of thin films for IC IMD was from
NEC Corp [ 31 ] . ... Adhesion of these fluorocarbon films is generally poor , and is
greatly increased by first depositing a non - fluorinated hydrocarbon film ( which ...
The first published work targeting these types of thin films for IC IMD was from
NEC Corp [ 31 ] . ... Adhesion of these fluorocarbon films is generally poor , and is
greatly increased by first depositing a non - fluorinated hydrocarbon film ( which ...
Page 149
SiOF films with a range of F concentrations were deposited using an electron
cyclotron resonance ( ECR ) plasma upon Si , Al / Si , TiN / Al / Si , and Al / SiO2 /
Si substrates . Following deposition , the films were deliberately hydrated and / or
...
SiOF films with a range of F concentrations were deposited using an electron
cyclotron resonance ( ECR ) plasma upon Si , Al / Si , TiN / Al / Si , and Al / SiO2 /
Si substrates . Following deposition , the films were deliberately hydrated and / or
...
Page 159
Thickness changes after annealing and internal stresses in as - deposited DLC
films vs dielectric constants : open markers - thickness changes ; solid markers -
stresses . A different effect of the deposition power on film stress was observed
for ...
Thickness changes after annealing and internal stresses in as - deposited DLC
films vs dielectric constants : open markers - thickness changes ; solid markers -
stresses . A different effect of the deposition power on film stress was observed
for ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel