Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
... films for IC IMD was from NEC Corp [ 31 ] . Endo and Tatsumi used a parallel - plate reactor and in separate experiments a helicon reactor to deposit highly fluorinated films from source gases including CH4 , CF4 and C2F6 . Using the ...
... films for IC IMD was from NEC Corp [ 31 ] . Endo and Tatsumi used a parallel - plate reactor and in separate experiments a helicon reactor to deposit highly fluorinated films from source gases including CH4 , CF4 and C2F6 . Using the ...
Page 149
... films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma upon Si ...
... films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma upon Si ...
Page 159
... deposited DLC films vs dielectric constants : open markers - thickness changes ; solid markers - stresses . A different effect of the deposition power on film stress was observed for the deposition of fluorinated FDLC films . As ...
... deposited DLC films vs dielectric constants : open markers - thickness changes ; solid markers - stresses . A different effect of the deposition power on film stress was observed for the deposition of fluorinated FDLC films . As ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber