Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 44
... fluorine scavenging . Overall , film deposition rates tended to be low , 1500 Å / m or less . Absorbance .15- 555 C = O 4000 3500 3000 2500 2000 C - E For all films , FT - IR analysis reveals the strong presence of C - F bonding but ...
... fluorine scavenging . Overall , film deposition rates tended to be low , 1500 Å / m or less . Absorbance .15- 555 C = O 4000 3500 3000 2500 2000 C - E For all films , FT - IR analysis reveals the strong presence of C - F bonding but ...
Page 141
... fluorine doping has been performed by adding SiF4 to TICS / He / O2 system . Figure 10 shows IR absorption spectra of the film deposited with TICS / He / O2 and SiF4 . Absorption peak of OH bonds does not appear in the spectrum as for ...
... fluorine doping has been performed by adding SiF4 to TICS / He / O2 system . Figure 10 shows IR absorption spectra of the film deposited with TICS / He / O2 and SiF4 . Absorption peak of OH bonds does not appear in the spectrum as for ...
Page 184
... fluorine content in HDPCVD FSG films increases with decreasing wafer temperature , decreasing wafer bias rf power , and decreasing HDP rf power ( Table I ) . For deposition temperatures from 275-350 ° C using 100 % SiF4 flow in the ...
... fluorine content in HDPCVD FSG films increases with decreasing wafer temperature , decreasing wafer bias rf power , and decreasing HDP rf power ( Table I ) . For deposition temperatures from 275-350 ° C using 100 % SiF4 flow in the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films