Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 44
the deposition rate above 300 °C ; without hydrogen ( Process 3 ) , the rate falls
to zero at 400 °C . Presumably , this is due to fluorine scavenging . Overall , film
deposition rates tended to be low , 1500 Å / m or less . Absorbance For all films ...
the deposition rate above 300 °C ; without hydrogen ( Process 3 ) , the rate falls
to zero at 400 °C . Presumably , this is due to fluorine scavenging . Overall , film
deposition rates tended to be low , 1500 Å / m or less . Absorbance For all films ...
Page 141
5 SiF4 addition to TICS / O / He As the host - material quality has been improved ,
fluorine doping has been performed by adding SiF4 to TICS / He / O2 system .
Figure 10 shows IR absorption spectra of the film deposited with TICS / He / O2 ...
5 SiF4 addition to TICS / O / He As the host - material quality has been improved ,
fluorine doping has been performed by adding SiF4 to TICS / He / O2 system .
Figure 10 shows IR absorption spectra of the film deposited with TICS / He / O2 ...
Page 184
By performing Taguchi - type design - of - experiments , we determined that the
fluorine content in HDPCVD FSG films increases with decreasing wafer
temperature , decreasing wafer bias rf power , and decreasing HDP rf power (
Table I ) .
By performing Taguchi - type design - of - experiments , we determined that the
fluorine content in HDPCVD FSG films increases with decreasing wafer
temperature , decreasing wafer bias rf power , and decreasing HDP rf power (
Table I ) .
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |