Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 53
... Fracture properties of the films were studied using a protocol of increasing severity ( i ) stability in air ( 50 % humidity ) , ( ii ) stability under water , ( iii ) stability under water with controlled indention ( 5N ) and ( iv ) ...
... Fracture properties of the films were studied using a protocol of increasing severity ( i ) stability in air ( 50 % humidity ) , ( ii ) stability under water , ( iii ) stability under water with controlled indention ( 5N ) and ( iv ) ...
Page 89
... Replacing a high - modulus , low - elongation material such as SiO2 will have an as yet unknown effect on stress - dependent reliability issues such as electromigration . 8KV X10,000 1Pm Figure 5. SEM fracture cross- section of 89.
... Replacing a high - modulus , low - elongation material such as SiO2 will have an as yet unknown effect on stress - dependent reliability issues such as electromigration . 8KV X10,000 1Pm Figure 5. SEM fracture cross- section of 89.
Page 90
8KV X10,000 1Pm Figure 5. SEM fracture cross- section of PTFE nanoemulsion gap- fill with oxide cap . ACKNOWLEDGEMENTS The authors would like to thank John Bartz , Judith Teguh , Steve Sauerbrunn , Jennifer Schieffer , and Mary Berg of ...
8KV X10,000 1Pm Figure 5. SEM fracture cross- section of PTFE nanoemulsion gap- fill with oxide cap . ACKNOWLEDGEMENTS The authors would like to thank John Bartz , Judith Teguh , Steve Sauerbrunn , Jennifer Schieffer , and Mary Berg of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber