Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 75
... function of curing temperature , ( b ) Degree of imidization as a function of the time at various curing temperatures . Imidization is complete in about 10 min at 350 ° C in N2 The degree of imidization was also characterized as a ...
... function of curing temperature , ( b ) Degree of imidization as a function of the time at various curing temperatures . Imidization is complete in about 10 min at 350 ° C in N2 The degree of imidization was also characterized as a ...
Page 96
... function of wafer temperature . Using this model , we can predict the rate of evaporation of various solvents as a function of temperature and the solvent concentration in the atmosphere around the wafer . Figure 8 shows the evaporation ...
... function of wafer temperature . Using this model , we can predict the rate of evaporation of various solvents as a function of temperature and the solvent concentration in the atmosphere around the wafer . Figure 8 shows the evaporation ...
Page 157
... function of the electric field . Details of the electrical characterization techniques can be found elsewhere [ 6 ] ... function of RF power and pressure in reactor : solid markers show values in as - deposited films ; open markers show ...
... function of the electric field . Details of the electrical characterization techniques can be found elsewhere [ 6 ] ... function of RF power and pressure in reactor : solid markers show values in as - deposited films ; open markers show ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber