Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 39
Page 65
... groups ( strong intermolecular interactions ) , stiff , bulky groups in the backbone , and rodlike segments . Some of these features are detrimental to the requirements for interlayer die- lectrics . Strongly polar groups usually ...
... groups ( strong intermolecular interactions ) , stiff , bulky groups in the backbone , and rodlike segments . Some of these features are detrimental to the requirements for interlayer die- lectrics . Strongly polar groups usually ...
Page 67
... groups in ortho - position to the ether linkages in the repeating unit results in an increase of T , by 25 ° C ( 16b ➜ 16i , j ) . In contrast , the introduction of only one CF3 - group decreases T , by 20 ° C , if Y = -C ( CH3 ) 2 ...
... groups in ortho - position to the ether linkages in the repeating unit results in an increase of T , by 25 ° C ( 16b ➜ 16i , j ) . In contrast , the introduction of only one CF3 - group decreases T , by 20 ° C , if Y = -C ( CH3 ) 2 ...
Page 112
... groups . The splitting between these two features that they attribute to Si - F2 bonding groups is ~ 68 cm - 1 for F - concentrations of about 6-8 at . % , and is significantly smaller than what would be expected on the basis of ...
... groups . The splitting between these two features that they attribute to Si - F2 bonding groups is ~ 68 cm - 1 for F - concentrations of about 6-8 at . % , and is significantly smaller than what would be expected on the basis of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films