Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 65
Exceptions are those polymers which are derived from 4 , 4 ' - dihydroxybiphenyl
, 4 , 4 'dihydoxydiphenyl sulfone , and 4 , 4 ' - dihydroxybenzophenone , which
introduce rigid or strongly polar groups into the polymer backbone .
Exceptions are those polymers which are derived from 4 , 4 ' - dihydroxybiphenyl
, 4 , 4 'dihydoxydiphenyl sulfone , and 4 , 4 ' - dihydroxybenzophenone , which
introduce rigid or strongly polar groups into the polymer backbone .
Page 67
... but depends on the rest of the repeating unit as well . The introduction of two
trifluoromethyl groups in ortho - position to the ether linkages in the repeating unit
results in an increase of T , by 25 °C ( 16b → 16i , i ) . In contrast , the introduction
...
... but depends on the rest of the repeating unit as well . The introduction of two
trifluoromethyl groups in ortho - position to the ether linkages in the repeating unit
results in an increase of T , by 25 °C ( 16b → 16i , i ) . In contrast , the introduction
...
Page 112
and is significantly smaller than what would be expected on the basis of
kinematic effects for Si - F2 groups from the atomic masses of Si and F 157 . For
example , based on the calculations in Ref . 5 a frequency splitting of
approximately 90 ...
and is significantly smaller than what would be expected on the basis of
kinematic effects for Si - F2 groups from the atomic masses of Si and F 157 . For
example , based on the calculations in Ref . 5 a frequency splitting of
approximately 90 ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |