Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 65
... groups ( strong intermolecular interactions ) , stiff , bulky groups in the backbone , and rodlike segments . Some of these features are detrimental to the requirements for interlayer die- lectrics . Strongly polar groups usually ...
... groups ( strong intermolecular interactions ) , stiff , bulky groups in the backbone , and rodlike segments . Some of these features are detrimental to the requirements for interlayer die- lectrics . Strongly polar groups usually ...
Page 67
... groups in ortho - position to the ether linkages in the repeating unit results in an increase of T , by 25 ° C ( 16b ➜ 16i , j ) . In contrast , the introduction of only one CF3 - group decreases T , by 20 ° C , if Y = -C ( CH3 ) 2 ...
... groups in ortho - position to the ether linkages in the repeating unit results in an increase of T , by 25 ° C ( 16b ➜ 16i , j ) . In contrast , the introduction of only one CF3 - group decreases T , by 20 ° C , if Y = -C ( CH3 ) 2 ...
Page 112
... groups . The splitting between these two features that they attribute to Si - F2 bonding groups is ~ 68 cm - 1 for F - concentrations of about 6-8 at . % , and is significantly smaller than what would be expected on the basis of ...
... groups . The splitting between these two features that they attribute to Si - F2 bonding groups is ~ 68 cm - 1 for F - concentrations of about 6-8 at . % , and is significantly smaller than what would be expected on the basis of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber