Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 29
... heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress . Parylene AF - 4 film about 1 μm thick was heated to ...
... heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress . Parylene AF - 4 film about 1 μm thick was heated to ...
Page 38
... heating transient , tending to O at the cure temperature of the PFCB - 300 ° C . The negative initial value of the total curvature results from the over - riding interaction between the compressive Ta film and the Si wafer . During the ...
... heating transient , tending to O at the cure temperature of the PFCB - 300 ° C . The negative initial value of the total curvature results from the over - riding interaction between the compressive Ta film and the Si wafer . During the ...
Page 72
... heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic acid specimen was used for higher ... heating and FTIR measurement was repeated in order to get FTIR spectra as a function of curing temperature , time ...
... heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic acid specimen was used for higher ... heating and FTIR measurement was repeated in order to get FTIR spectra as a function of curing temperature , time ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films