Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 35
Page 29
... heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress . Parylene AF - 4 film about 1 μm thick was heated to ...
... heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress . Parylene AF - 4 film about 1 μm thick was heated to ...
Page 38
... heating transient , tending to O at the cure temperature of the PFCB - 300 ° C . The negative initial value of the total curvature results from the over - riding interaction between the compressive Ta film and the Si wafer . During the ...
... heating transient , tending to O at the cure temperature of the PFCB - 300 ° C . The negative initial value of the total curvature results from the over - riding interaction between the compressive Ta film and the Si wafer . During the ...
Page 72
... heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic acid specimen was used for higher ... heating and FTIR measurement was repeated in order to get FTIR spectra as a function of curing temperature , time ...
... heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic acid specimen was used for higher ... heating and FTIR measurement was repeated in order to get FTIR spectra as a function of curing temperature , time ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber