Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 55
Page 6
Specifically , the relatively higher & of polyimides in - plane relative to their out -
of - plane values will tend to increase capacitance in the circuit ( when compared
to an isotropic material with the same out - of - plane € ) . Fluorinated polyimides
...
Specifically , the relatively higher & of polyimides in - plane relative to their out -
of - plane values will tend to increase capacitance in the circuit ( when compared
to an isotropic material with the same out - of - plane € ) . Fluorinated polyimides
...
Page 10
Using the parallel plate reactor with rf power levels from 50 W to 200 W and
deposition pressures from 100 - 200 mtorr , these workers were able to correlate
increasing rf power with higher crosslink density in the films deposited on the ...
Using the parallel plate reactor with rf power levels from 50 W to 200 W and
deposition pressures from 100 - 200 mtorr , these workers were able to correlate
increasing rf power with higher crosslink density in the films deposited on the ...
Page 185
The data was normalized to the median via resistance of the SiO2 control cell , a
fail occurred when the 90 % / 98 % was 75 % or more higher than the control cell
median , and at least six wafers were tested per wafer lot . SiO2 Control SIOF Si ...
The data was normalized to the median via resistance of the SiO2 control cell , a
fail occurred when the 90 % / 98 % was 75 % or more higher than the control cell
median , and at least six wafers were tested per wafer lot . SiO2 Control SIOF Si ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |