Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 44
... hydrogen appears to be one of scavenging excess fluorine ; it does not become incorporated into the growing film . Carbonyl bonding is also present , suggesting that 1500 1000 500 oxygen Wavenumbers , cm - 1 Figure 3 : FT - IR spectrum ...
... hydrogen appears to be one of scavenging excess fluorine ; it does not become incorporated into the growing film . Carbonyl bonding is also present , suggesting that 1500 1000 500 oxygen Wavenumbers , cm - 1 Figure 3 : FT - IR spectrum ...
Page 159
... hydrogen in the films , which increases with increasing hydrogen dilution of the fluorocarbon precursor . The dielectric constant similarly increases with increasing deposition power . The FDLC films with k = 2.8 have a thermal ...
... hydrogen in the films , which increases with increasing hydrogen dilution of the fluorocarbon precursor . The dielectric constant similarly increases with increasing deposition power . The FDLC films with k = 2.8 have a thermal ...
Page 198
... Hydrogen Evalution Analyser : Graphing Screen 2 2 Me - 46 Terr 2 water ( 17,18 ) silane ( 29 , 30 ) File fartoon2 teb Pressure < Linear ) water ( 17,18 ) Terr 1000.0 Temperature ( deg File : fan002 . teb 2 hydrogen ( 2 ) 2330 44 20 2990 ...
... Hydrogen Evalution Analyser : Graphing Screen 2 2 Me - 46 Terr 2 water ( 17,18 ) silane ( 29 , 30 ) File fartoon2 teb Pressure < Linear ) water ( 17,18 ) Terr 1000.0 Temperature ( deg File : fan002 . teb 2 hydrogen ( 2 ) 2330 44 20 2990 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films