Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 44
... hydrogen appears to be one of scavenging excess fluorine ; it does not become incorporated into the growing film . Carbonyl bonding is also present , suggesting that 1500 1000 500 oxygen Wavenumbers , cm - 1 Figure 3 : FT - IR spectrum ...
... hydrogen appears to be one of scavenging excess fluorine ; it does not become incorporated into the growing film . Carbonyl bonding is also present , suggesting that 1500 1000 500 oxygen Wavenumbers , cm - 1 Figure 3 : FT - IR spectrum ...
Page 159
... hydrogen in the films , which increases with increasing hydrogen dilution of the fluorocarbon precursor . The dielectric constant similarly increases with increasing deposition power . The FDLC films with k = 2.8 have a thermal ...
... hydrogen in the films , which increases with increasing hydrogen dilution of the fluorocarbon precursor . The dielectric constant similarly increases with increasing deposition power . The FDLC films with k = 2.8 have a thermal ...
Page 198
... Hydrogen Evalution Analyser : Graphing Screen 2 2 Me - 46 Terr 2 water ( 17,18 ) silane ( 29 , 30 ) File fartoon2 teb Pressure < Linear ) water ( 17,18 ) Terr 1000.0 Temperature ( deg File : fan002 . teb 2 hydrogen ( 2 ) 2330 44 20 2990 ...
... Hydrogen Evalution Analyser : Graphing Screen 2 2 Me - 46 Terr 2 water ( 17,18 ) silane ( 29 , 30 ) File fartoon2 teb Pressure < Linear ) water ( 17,18 ) Terr 1000.0 Temperature ( deg File : fan002 . teb 2 hydrogen ( 2 ) 2330 44 20 2990 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber