Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 49
... cured after heating at 400 ° C ( appearance of imide carbonyl at 1781 and 1730 cm - 1 coupled with the disappearance of amide peaks at 1684 and 1606 cm - 1 and the -OH and -NH bands at 3000-3500 cm - 1 ) . ( a ) EIO2 C. CO2 Et , CICO + 49.
... cured after heating at 400 ° C ( appearance of imide carbonyl at 1781 and 1730 cm - 1 coupled with the disappearance of amide peaks at 1684 and 1606 cm - 1 and the -OH and -NH bands at 3000-3500 cm - 1 ) . ( a ) EIO2 C. CO2 Et , CICO + 49.
Page 72
... imide peaks of 1778 and 1751 cm1 carbonyl bands because they were fairly well isolated from the rest of the IR spectrum . As internal reference standard , the band at 1012cm ' , attributed to the vibration modes of the aromatic moieties ...
... imide peaks of 1778 and 1751 cm1 carbonyl bands because they were fairly well isolated from the rest of the IR spectrum . As internal reference standard , the band at 1012cm ' , attributed to the vibration modes of the aromatic moieties ...
Page 74
... imide ring or to the imide carbonyl groups . -1 Transmittance ( % ) 3500 3000 2500 2000 1500 1000 500 Wavenumber ( cm3 ) Fig.2 FTIR transmittance spectrum for the polyimide film soft baked at 250 ° C and subsequently hard baked at 350 ...
... imide ring or to the imide carbonyl groups . -1 Transmittance ( % ) 3500 3000 2500 2000 1500 1000 500 Wavenumber ( cm3 ) Fig.2 FTIR transmittance spectrum for the polyimide film soft baked at 250 ° C and subsequently hard baked at 350 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber