Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 71
... imidization reaction is complete at 350 ° C . Also , it was found that imidization proceeds in two stages under isothermal condition , which was characterized by an initial fast imidization step that changes into a second , slower ...
... imidization reaction is complete at 350 ° C . Also , it was found that imidization proceeds in two stages under isothermal condition , which was characterized by an initial fast imidization step that changes into a second , slower ...
Page 75
... imidization step that changes into a second , slower imidization process . As the curing temperature increases , the contribution due to the first stage increases . As a result , the degree of imidization at the starting point of second ...
... imidization step that changes into a second , slower imidization process . As the curing temperature increases , the contribution due to the first stage increases . As a result , the degree of imidization at the starting point of second ...
Page 77
... imidization reaction complete at 350 ° C . It was found that imidization proceeds in two stages under isothermal condition . The degree of imidization of the film was characterized by an initial fast imidization step that changes into a ...
... imidization reaction complete at 350 ° C . It was found that imidization proceeds in two stages under isothermal condition . The degree of imidization of the film was characterized by an initial fast imidization step that changes into a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber