Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 12
... important challenge relates to more fully understanding the differences in required processing characteristics for low & thin films , insofar as the damascene and subtractive metal etch processes are concerned . ACKNOWLEDGMENTS The ...
... important challenge relates to more fully understanding the differences in required processing characteristics for low & thin films , insofar as the damascene and subtractive metal etch processes are concerned . ACKNOWLEDGMENTS The ...
Page 92
... important role of density is on dielectric constant as shown in Figure 1. The key factor in the dielectric constant of nanoporous silica is the density ( or porosity ) and secondary factors are primarily related to surface chemistry and ...
... important role of density is on dielectric constant as shown in Figure 1. The key factor in the dielectric constant of nanoporous silica is the density ( or porosity ) and secondary factors are primarily related to surface chemistry and ...
Page 93
... important . By employing the proper precursor ( i.e. , which eliminates requirements for a catalyst , solvent atmosphere control , and which has high strength and negligible drying shrinkage ) , the deposition and post - processing of ...
... important . By employing the proper precursor ( i.e. , which eliminates requirements for a catalyst , solvent atmosphere control , and which has high strength and negligible drying shrinkage ) , the deposition and post - processing of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films